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| STW45NM50FD N-channel 500 V, 0.07 , 45 A, TO-247 FDmeshTM Power MOSFET (with fast diode) Features Type STW45NM50FD VDSS 500 V RDS(on) max < 0.1 ID 45 A 100% avalanche tested High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application Switching applications Figure 1. Internal schematic diagram Description The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Marking W45NM50FD Package TO-247 Packaging Tube Order code STW45NM50FD July 2009 Doc ID 7955 Rev 10 1/12 www.st.com 12 Contents STW45NM50FD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 7955 Rev 10 STW45NM50FD Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 500 30 45 28.4 180 417 2.08 20 -65 to 150 Unit V V A A A W W/C V/ns C PTOT dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD 45 A, di/dt 400 A/s, VDD = 80%V(BR)DSS Table 3. Symbol Thermal resistance Parameter Value 0.3 30 300 Unit C/W C/W C Rthj-case Thermal resistance junction-case max Rthj-a Tl Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Table 4. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) Value 22.5 800 Unit A mJ Doc ID 7955 Rev 10 3/12 Electrical characteristics STW45NM50FD 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 30 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 22.5 A 3 4 0.07 Min. 500 10 100 100 Typ. Max. Unit V A A nA V 5 0.10 Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) Qg Qgs Qgd RG Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS >ID(on) x RDS(on)max ID = 22.5 A Min. Typ. 20 3600 1260 80 350 92 22 40 2 120 Max. Unit S pF pF pF pF nC nC nC VDS =25 V, f=1 MHz, VGS=0 - VGS=0, VDS =0 to 400 V VDD= 400 V, ID = 45 A VGS =10 V Figure 14 f=1 MHz Gate DC Bias= 0 test signal level = 20 mV open drain - - - 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 Doc ID 7955 Rev 10 STW45NM50FD Table 7. Symbol td(on) tr tr(Voff) tf tc Electrical characteristics Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD=250 V, ID= 22.5 A, RG=4.7 , VGS=10 V Figure 15 VDD=400 V, ID= 45 A, RG=4.7 , VGS=10 V Figure 15 Min. Typ. 26.5 107.5 21.6 87.7 110.9 Max. Unit ns ns ns ns ns - - - - Table 8. Symbol ISD ISDM(1) VSD (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45 A, VGS = 0 ISD = 45 A, VDD = 100 V di/dt = 100 A/s, (see Figure 18) ISD= 45 A, Tj = 150 C di/dt = 100 A/s, VDD=100 V, (see Figure 18) Test conditions Min. 200 1600 16 324 4017 24.8 Typ. Max. Unit 45 180 1.5 A A V ns nC A ns nC A trr Qrr IRRM trr Qrr IRRM - 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Doc ID 7955 Rev 10 5/12 Electrical characteristics STW45NM50FD 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 Doc ID 7955 Rev 10 STW45NM50FD Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 7955 Rev 10 7/12 Test circuits STW45NM50FD 3 Test circuits Figure 14. Gate charge test circuit VDD 12V 2200 Figure 13. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform V(BR)DSS VD Figure 18. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/12 Doc ID 7955 Rev 10 STW45NM50FD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 7955 Rev 10 9/12 Package mechanical data STW45NM50FD TO-247 Mechanical data mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 10/12 Doc ID 7955 Rev 10 STW45NM50FD Revision history 5 Revision history Table 9. Date 05-Apr-2005 26-Apr-2006 23-Jul-2009 Document revision history Revision 8 9 10 Changes Modified value on Source drain diode New template Modified values on Switching times Doc ID 7955 Rev 10 11/12 STW45NM50FD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 7955 Rev 10 |
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